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ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g opti mos ? 2 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 35 a t c =100 c 25 pulsed drain current 2) i d,pulse t c =25 c 140 avalanche energy, single pulse e as i d =35 a, r gs =25 ? 65 mj reverse diode d v /d t d v /d t i d =35 a, v ds =80 v, d i /d t =100 a/s, t j,max =175 c 6 kv/s gate source voltage 3) v gs 20 v power dissipation p tot t c =25 c 71 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 3 ) t jmax =150c and duty cycle d=0.01 for vgs<-5v value 1) j-std20 and jesd22 2) see figure 3 v ds 100 v r ds(on),max (to252) 25 m ? i d 35 a product summary type ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g package pg-to263-3 pg-to252-3 pg-to262-3 pg-to220-3 pg-to251-3 marking 26cn10n 25cn10n 26cn10n 26cn10n 25cn10n rev. 1.01 page 1 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.1 k/w r thja minimal footprint - - 62 6 cm2 cooling area 4) --40 minimal footprint - - 75 6 cm2 cooling area 4) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =39 a 234 zero gate voltage drain current i dss v ds =80 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =80 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =35 a, (to252) -1925 m ? v gs =10 v, i d =35 a, (to251) -1925 v gs =10 v, i d =35 a, (to263) -2026 v gs =10 v, i d =35 a, (to220, to262) -2026 gate resistance r g - 1.1 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =35 a 19 38 - s values 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. thermal resistance, junction - ambient (to220, to262, to263) thermal resistance, junction - ambient (to252, to251) rev. 1.01 page 2 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 1560 2070 pf output capacitance c oss - 232 309 reverse transfer capacitance c rss -1624 turn-on delay time t d(on) -1015ns rise time t r -46 turn-off delay time t d(off) -1319 fall time t f -34 gate char g e characteristics 5) gate to source charge q gs - 9 12 nc gate to drain charge q gd -68 switching charge q sw -1014 gate charge total q g -2331 gate plateau voltage v plateau - 5.6 - v output charge q oss v dd =50 v, v gs =0 v -2432nc reverse diode diode continous forward current i s - - 35 a diode pulse current i s,pulse - - 140 diode forward voltage v sd v gs =0 v, i f =35 a, t j =25 c - 1 1.2 v reverse recovery time t rr -85 ns reverse recovery charge q rr - 165 - nc 5) see figure 16 for gate charge parameter definition v r =50 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =50 v, f =1 mhz v dd =50 v, v gs =10 v, i d =35 a, r g =1.6 ? v dd =50 v, i d =35 a, v gs =0 to 10 v rev. 1.01 page 3 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 0.1 1 10 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 80 0 50 100 150 200 t c [c] p tot [w] 0 5 10 15 20 25 30 35 40 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 v ds [v] i d [a] rev. 1.01 page 4 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 25 c 175 c 0 20 40 60 80 02468 v gs [v] i d [a] 0 5 10 15 20 25 30 35 40 0102030 i d [a] g fs [s] 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 20 40 60 80 100 012345 v ds [v] i d [a] 5 v 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 10 20 30 40 50 60 0 10203040506070 i d [a] r ds(on) [m ? ] rev. 1.01 page 5 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =35 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 20 40 60 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 39 a 390 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] 0 ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 20406080 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.01 page 6 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =35 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 v 50 v 80 v 0 2 4 6 8 10 12 0 5 10 15 20 25 q gate [nc] v gs [v] 90 95 100 105 110 115 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1 10 100 1000 t av [s] i as [a] rev. 1.01 page 7 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g pg-to220-3: outline rev. 1.01 page 8 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g pg-to-263 (d2-pak) rev. 1.01 page 9 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g rev. 1.01 page 10 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g pg-to252-3: outline rev. 1.01 page 11 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g pg-to251-3: outline rev. 1.01 page 12 2006-06-02
ipb26cn10n g ipd25cn10n g ipi26cn10n g ipp26cn10n g ipu25cn10n g published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, i ncluding without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies offi ce. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of such compone nts can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human bo dy, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 1.01 page 13 2006-06-02

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